au.\*:("SIDOROV YU G")
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INFLUENCE D'UNE PURIFICATION SUR LA CRISTALLISATION DE PBTE FONDUKANTER YU O; SIDOROV YU G.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1980; VOL. 16; NO 10; PP. 1874-1875; BIBL. 5 REF.Article
ASSOCIATION ET ACTIVITE DES COMPOSANTS DANS LES MASSES FONDUES DU SYSTEME PB-SN-TESIDOROV YU G; SABININA IV; VASIL'EVA LF et al.1982; Z. FIZ. HIM.; ISSN 0044-4537; SUN; DA. 1982; VOL. 56; NO 5; PP. 1166-1170; BIBL. 12 REF.Article
CROISSANCE DES COUCHES DE PB0,8)SN0,2)TE DANS UN VOLUME QUASI-FERMESIDOROV YU G; SABININA IV; GAVRILOVA TA et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1978; VOL. 14; NO 1; PP. 62-64; H.T. 1; BIBL. 6 REF.Article
ELECTROPHYSICAL PROPERTIES OF NON-DOPED EPITAXIAL GAAS IN THE RANGE FROM 10 TO 1100OK.KHORKHLOV VI; SIDOROV YU G; DVORETSKII SA et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 25; NO 1; PP. 311-321; ABS. RUSSE; BIBL. 29 REF.Article
EQUILIBRE DES SOL. D'IMPURETES DANS L'ARSENIURE DE GA AVEC UNE PHASE GAZEUSE ET DES SOL. D'ARSENIURE DE GA DANS GASIDOROV YU G; SIDOROVA AV; DVORETSKIJ SA et al.1972; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1972; VOL. 8; NO 10; PP. 1738-1743; BIBL. 14 REF.Serial Issue
BEHAVIOR OF IMPURITIES DURING CHEMICAL VAPOR DEPOSITION OF GAASSIDOROV YU G; VASIL'EVA LF; SABININA IV et al.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 5; PP. 698-702; BIBL. 18 REF.Article
DOPAGE DES COUCHES EPITAXIQUES DE GAAS PAR L'OXYGENEMAKSIMOV VL; DVORETSKIJ SA; VASIL'EVA LV et al.1980; IZV. AKAD. NAUK SSSR, NEORG. MATER.; ISSN 0002-3337X; SUN; DA. 1980; VOL. 16; NO 6; PP. 959-963; BIBL. 10 REF.Article
INFLUENCE DES IMPURETES SUR L'ENERGIE DES DEFAUTS D'EMPILEMENT DANS L'ARSENIURE DE GALLIUMASTAKHOV VM; VASIL'EVA LF; SIDOROV YU G et al.1980; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1980; VOL. 22; NO 2; PP. 477-482; BIBL. 14 REF.Article
COUCHES EPITAXIALES D'ARSENIURE DE GALLIUM POUR LA MICROELECTRONIQUEALEKSANDROV LN; SIDOROV YU G; ZALETIN VM et al.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 6; PP. 493-508; BIBL. 2 P.Article
ETUDE DES CARACTERISTIQUES ELECTRIQUES DES DEFAUTS PRODUITS DANS DE L'ARSENIURE DE GALLIUM EPITAXIQUE DE TYPE N AVEC UN DOPAGE NON CONTROLEKHOKHLOV VI; DVORETSKIJ SA; SIDOROV YU G et al.1974; IZVEST. VYSSH. UCHEBN. ZAVED., FIZ.; S.S.S.R.; DA. 1974; VOL. 17; NO 10; PP. 92-97; BIBL. 23 REF.Article
Concentrations à l'équilibre des défauts ponctuels dans les solutions solides PbxSn1-xTeSIDOROV, YU. G; SABININA, I. V.Žurnal fizičeskoj himii. 1985, Vol 59, Num 11, pp 2723-2727, issn 0044-4537Article
CROISSANCE DE STRUCTURES PHOTOSENSIBLES A BASE DE PB1-XSNX TE PAR LA METHODE D'EPITAXIE EN PHASE LIQUIDEALIEV V SH; GREKOV YU A; DVORETSKIJ SA et al.1982; IZV. AKAD. NAUK SSR, NEORG. MATER.; ISSN 0002-337X; SUN; DA. 1982; VOL. 18; NO 3; PP. 388-390; BIBL. 3 REF.Article
MESURE DES VITESSES DE CROISSANCE ET D'ATTAQUE CHIMIQUE SELECTIVE DE GAASVASIL'EVA LF; SMIRNOV AI; SIDOROV YU G et al.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 186-188; BIBL. 2 REF.Article
Propriétés thermodynamiques des lacunes dans les solutions solides PbxSn1-xTeSIDOROV, YU. G; SABININA, I. V.Žurnal fizičeskoj himii. 1985, Vol 59, Num 11, pp 2717-2722, issn 0044-4537Article
(112) CdTe/(l12) GaAs lattice matching in molecular beam epitaxyIVANOV, I. S; SIDOROV, YU. G; YAKUSHEV, M. V et al.Inorganic materials. 1997, Vol 33, Num 3, pp 243-247, issn 0020-1685Article
Defect formation during MBE growth of CdTe (111)SABININA, I. V; GUTAKOVSKII, A. K; SIDOROV, YU. G et al.Physica status solidi. A. Applied research. 1991, Vol 126, Num 1, pp 181-188, issn 0031-8965Article
Nature of V-shaped defects in HgCdTe epilayers grown by molecular beam epitaxySABININA, I. V; GUTAKOVSKY, A. K; SIDOROV, Yu. G et al.Journal of crystal growth. 2005, Vol 274, Num 3-4, pp 339-346, issn 0022-0248, 8 p.Article
The controlled growth of high-quality mercury cadmium tellurideVARAVIN, V. S; DVORETSKY, S. A; LIBERMAN, V. I et al.Thin solid films. 1995, Vol 267, Num 1-2, pp 121-125, issn 0040-6090Conference Paper
Photoluminescence of (111) CdTe films grown by molecular beam epitaxy on (100) GaAs substratesMIKOKHIN, E. A; DVORETSKII, S. A; KALININ, V. V et al.Soviet physics. Solid state. 1991, Vol 33, Num 4, pp 655-658, issn 0038-5654Article
Molecular beam epitaxy of high quality Hg1-xCdxTe films with control of the composition distributionVARAVIN, V. S; DVORETSKY, S. A; LIBERMAN, V. I et al.Journal of crystal growth. 1996, Vol 159, Num 1-4, pp 1161-1166, issn 0022-0248Conference Paper
MCT infrared photodiodes on the basis of graded gap P-p heterojunction grown by MBE HgCdTe epilayers on GaAsVASILIEV, V. V; REMESNIK, V. G; DVORETSKY, S. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2006, pp 61892A.1-61892A.5, issn 0277-786X, isbn 0-8194-6245-4, 1VolConference Paper
In situ ellipsometry for control of Hg1-xCdxTe nanolayer structures and inhomogeneous layers during MBE growthSHVETS, V. A; RYKHLITSKI, S. V; SPESIVTSEV, E. V et al.Thin solid films. 2004, Vol 455-56, pp 688-694, issn 0040-6090, 7 p.Conference Paper
Blue-shift in photoluminescence of ion-milled HgCdTe films and relaxation of defects induced by the millingPOCIASK, M; IZHNIN, I. I; MYNBAEV, K. D et al.Thin solid films. 2010, Vol 518, Num 14, pp 3879-3881, issn 0040-6090, 3 p.Article
Ion-milling-assisted study of defect structure of acceptor-doped HgCdTe heterostructures grown by molecular beam epitaxyPOCIASK, M; IZHNIN, I. I; DVORETSKY, S. A et al.Semiconductor science and technology. 2008, Vol 23, Num 9, issn 0268-1242, 095001.1-095001.5Article
Investigation and characterization of Hg1-xCdxTe epilayersTSYBRII-IVASIV, Z. F; DARCHUK-KOROVINA, L. O; SIZOV, F. F et al.Journal of alloys and compounds. 2004, Vol 382, pp 288-291, issn 0925-8388, 4 p.Conference Paper
